HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SI-SIO2 INTERFACE

被引：63

作者：

KRIVANEK, OL

SHENG, TT

TSUI, DC

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 07期

关键词：

D O I：

10.1063/1.90077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：437 / 439

页数：3

共 19 条

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[4]

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[6]

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[7]

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[8] LEED-INVESTIGATION OF STEP ARRAYS ON CLEAVED GERMANIUM (111) SURFACES [J].

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[9]

IZUI K, 1977, J ELECTRON MICROSC, V26, P129

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