ELECTRON-MOBILITY BEHAVIOR FOR SI(001) INVERSION-LAYERS NEAR MOBILITY THRESHOLD BELOW 1.3 K

被引：0

作者：

BORZENETS, VV

FEHER, S

ORENDAC, M

SEMENCHINSKY, SG

机构：

[1] SAFARIK UNIV,DEPT EXPTL PHYS,KOSICE 04054,SLOVAKIA

[2] INST METROL SERV,MOSCOW 117334,RUSSIA

来源：

PHYSICS LETTERS A | 1995年 / 204卷 / 01期

关键词：

D O I：

10.1016/0375-9601(95)00460-K

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have investigated the electron mobility of high mobility Si MOSFETs near a metal-insulator transition at temperatures below 1.3 K and low current densities in a zero magnetic field. In this regime a new sharp peak of the field effect mobility was found at carrier densities just above the metal-insulator transition, The peak increases with decreasing temperature and becomes wider with increasing current, We attribute this effect to cold melting of the electronic crystal.

引用

页码：67 / 70

页数：4

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