Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations

被引：0
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作者：
Semenchinsky, S. [1 ]
Smrčka, L. [2 ]
Stehno, J. [2 ]
Borzenets, V. [2 ,3 ]
机构：
[1] Institute for Metrological Service, 2 Andreevskaya Nab., 117334 Moscow, Russia
[2] Institute of Physics, Acad. of Sci. of the Czech Republic, Cukrovarnická 10, 162 00 Prague 6, Czech Republic
[3] Inst. for Low Temp. Phys. and Eng., 47 Lenin Avenue, Kharkov 310164, Ukraine
来源：
Physics Letters, Section A: General, Atomic and Solid State Physics | 1996年 / 217卷 / 06期
关键词：
This work was supported by the Grant Agency of the Czech Republic under Contract No. 202/96/0036 and by the Fund for Fundamental Research of Russia through Grant No. 96-02-16838;
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摘要：
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页码：335 / 339
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