Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations

被引：0

作者：

Semenchinsky, S. ^{[1
]}

Smrčka, L. ^{[2
]}

Stehno, J. ^{[2
]}

Borzenets, V. ^{[2
,3
]}

机构：

[1] Institute for Metrological Service, 2 Andreevskaya Nab., 117334 Moscow, Russia

[2] Institute of Physics, Acad. of Sci. of the Czech Republic, Cukrovarnická 10, 162 00 Prague 6, Czech Republic

[3] Inst. for Low Temp. Phys. and Eng., 47 Lenin Avenue, Kharkov 310164, Ukraine

来源：

Physics Letters, Section A: General, Atomic and Solid State Physics | 1996年 / 217卷 / 06期

关键词：

This work was supported by the Grant Agency of the Czech Republic under Contract No. 202/96/0036 and by the Fund for Fundamental Research of Russia through Grant No. 96-02-16838;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：335 / 339

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