Anomalous Hall resistance in Si(001) high mobility inversion layers at high electron concentrations

被引：0
|
作者：
Semenchinsky, S. [1 ]
Smrčka, L. [2 ]
Stehno, J. [2 ]
Borzenets, V. [2 ,3 ]
机构：
[1] Institute for Metrological Service, 2 Andreevskaya Nab., 117334 Moscow, Russia
[2] Institute of Physics, Acad. of Sci. of the Czech Republic, Cukrovarnická 10, 162 00 Prague 6, Czech Republic
[3] Inst. for Low Temp. Phys. and Eng., 47 Lenin Avenue, Kharkov 310164, Ukraine
来源：
Physics Letters, Section A: General, Atomic and Solid State Physics | 1996年 / 217卷 / 06期
关键词：
This work was supported by the Grant Agency of the Czech Republic under Contract No. 202/96/0036 and by the Fund for Fundamental Research of Russia through Grant No. 96-02-16838;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
9
引用
收藏
页码：335 / 339
相关论文
共 50 条
  • [31] High In content pseudomorphic InGaAs layers for high-mobility heterostructures on InP (001)
    Wallart, X
    Pinsard, B
    Mollot, F
    JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 516 - 520
  • [32] HIGH-FREQUENCY HOT-ELECTRON DYNAMICS IN COLD SI INVERSION-LAYERS
    ALLEN, SJ
    TSUI, DC
    DEROSA, F
    THORNBER, K
    WILSON, BA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03): : 315 - 315
  • [33] ANOMALOUS HALL-EFFECT CONCENTRATIONS IN EXTRINSIC SI
    NEUMARK, GF
    SCHRODER, DK
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 174 - 174
  • [34] Electron mobility in quantized β-SiC inversion layers
    Gamiz, F
    Roldan, JB
    Lopez-Villanueva, JA
    Cartujo, P
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03): : 1631 - 1633
  • [35] EXPERIMENTAL COMPARISON OF ATOMIC ROUGHNESS AND HALL-MOBILITY IN P-SI INVERSION-LAYERS
    HAHN, PO
    HENZLER, M
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6492 - 6496
  • [36] Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-κ insulator:: The role of remote phonon scattering
    Fischetti, MV
    Neumayer, DA
    Cartier, EA
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (09) : 4587 - 4608
  • [37] Anomalous electron mobility in a coaxial Hall discharge plasma
    Meezan, NB
    Hargus, WA
    Cappelli, MA
    PHYSICAL REVIEW E, 2001, 63 (02):
  • [38] CYCLOTRON-RESONANCE OF SI(001) INVERSION-LAYERS
    ISIHARA, A
    MUKAI, M
    PHYSICAL REVIEW B, 1981, 24 (12): : 7408 - 7411
  • [39] Anomalous hall resistance in bilayer electron systems
    Ezawa, Z. F.
    Suzuki, S.
    Tsitsishvili, G.
    PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 : 641 - +
  • [40] AlGaN/GaN high electron mobility transistor grown by molecular beam epitaxy on Si(110): comparisons with Si(111) and Si(001)
    Cordier, Y.
    Moreno, J. -C.
    Baron, N.
    Frayssinet, E.
    Chenot, S.
    Damilano, B.
    Semond, F.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2, 2009, 6 : S1020 - S1023
12345