ELECTRON-MOBILITY BEHAVIOR FOR SI(001) INVERSION-LAYERS NEAR MOBILITY THRESHOLD BELOW 1.3 K

We have investigated the electron mobility of high mobility Si MOSFETs near a metal-insulator transition at temperatures below 1.3 K and low current densities in a zero magnetic field. In this regime a new sharp peak of the field effect mobility was found at carrier densities just above the metal-insulator transition, The peak increases with decreasing temperature and becomes wider with increasing current, We attribute this effect to cold melting of the electronic crystal.