OPTICAL CHARACTERIZATION OF DEEP LEVELS IN GAAS

被引：0
|
作者：
TAJIMA, M
机构：
来源：
SEMI-INSULATING III-V MATERIALS, MALMO 1988 | 1988年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：119 / 126
页数：8
相关论文
共 50 条
  • [21] CHARACTERIZATION OF DEEP LEVELS AND CARRIER COMPENSATION CREATED BY PROTON IRRADIATION IN UNDOPED GAAS
    TAN, HH
    WILLIAMS, JS
    JAGADISH, C
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) : 1481 - 1487
  • [22] CHARACTERIZATION OF DEEP LEVELS IN LEC GAAS CRYSTALS BY THE PHOTO-LUMINESCENCE TECHNIQUE
    TAJIMA, M
    OKADA, Y
    PHYSICA B & C, 1983, 116 (1-3): : 404 - 408
  • [23] CHARACTERIZATION OF DEEP DEFECT LEVELS IN AMORPHOUS SELENIUM BY OPTICAL METHODS
    IMAMURA, S
    KANEMITSU, Y
    HAYANO, T
    KITAMURA, T
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 663 - 666
  • [24] DEEP LEVELS IN GAAS PREPARED BY VPE
    BABINSKI, A
    BARANOWSKI, JM
    CZUB, M
    ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 335 - 338
  • [25] NONDESTRUCTIVE CHARACTERIZATION OF DEEP LEVELS IN SEMIINSULATING GAAS WAFERS USING MICROWAVE IMPEDANCE MEASUREMENT
    FUJISAKI, Y
    TAKANO, Y
    ISHIBA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (11): : L874 - L877
  • [26] OPTICAL SPECTROSCOPY OF IMPURITY LEVELS IN GAAS
    WAGNER, J
    PHYSICA SCRIPTA, 1989, T29 : 167 - 171
  • [27] CHARACTERIZATION OF DEEP IMPURITIES IN GAAS BY PHOTOLUMINESCENCE
    NISHINO, T
    FUJIWARA, Y
    KOJIMA, A
    HAMAKAWA, Y
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 452 : 2 - 8
  • [28] OPTICAL CHARACTERIZATION OF AN EPITAXIAL FILM OF GAAS ON A GAAS SUBSTRATE
    PALIK, ED
    HOLM, RT
    GIBSON, JW
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1975, 65 (10) : 1195 - 1195
  • [29] OPTICAL-DETECTION OF MISFIT DISLOCATION-INDUCED DEEP LEVELS AT INGAAS/GAAS HETEROJUNCTIONS
    RAISANEN, A
    BRILLSON, LJ
    GOLDMAN, RS
    KAVANAGH, KL
    WIEDER, HH
    APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3572 - 3574
  • [30] Interface deep levels in the bandgap of GaAs: GaAs/Al, GaAs/Pd and GaAs/Cu interfaces
    Musatov, AL
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1997, 10 : 49 - 62
12345