OPTICAL CHARACTERIZATION OF DEEP LEVELS IN GAAS

被引:0
|
作者
TAJIMA, M
机构
关键词
D O I
暂无
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:119 / 126
页数:8
相关论文
共 50 条
  • [41] METASTABLE BEHAVIOR OF DEEP LEVELS IN HYDROGENATED GAAS
    CHO, HY
    KIM, EK
    MIN, SK
    CHANG, KJ
    LEE, C
    APPLIED PHYSICS LETTERS, 1991, 58 (17) : 1866 - 1868
  • [42] Passivation of shallow and deep levels by lithium in GaAs
    Egilsson, T.
    Yang, B.
    Gislason, H.P.
    Physica Scripta T, 1994, T54
  • [43] DEEP LEVELS IN INDIUM-DOPED GAAS
    KAMINSKI, P
    NIZINKI, Z
    MATERNA, A
    ACTA PHYSICA POLONICA A, 1990, 77 (2-3) : 331 - 333
  • [44] Deep levels in GaAs due to Si δ doping
    Hubík, P
    Kristofik, J
    Mares, JJ
    Maly, J
    Hulicius, E
    Pangrác, J
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6488 - 6494
  • [45] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
    HOFMANN, DM
    AKIYAMA, M
    IKOMA, T
    GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, : 227 - 231
  • [46] Deep levels in rapid thermal annealed GaAs
    Kaminski, P.
    Gawlik, G.
    Kozlowski, R.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1994, B28 (1-3): : 439 - 443
  • [47] DEEP LEVELS IN GAAS ON SI GROWN BY MOCVD
    HOFMANN, DM
    AKIYAMA, M
    IKOMA, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 227 - 231
  • [48] PRESSURE-DEPENDENCE OF DEEP LEVELS IN GAAS
    REN, SY
    DOW, JD
    WOLFORD, DJ
    PHYSICAL REVIEW B, 1982, 25 (12): : 7661 - 7665
  • [49] THE EFFECTS OF DEEP LEVELS IN GAAS-MESFETS
    ZYLBERSZTEJN, A
    PHYSICA B & C, 1983, 117 (MAR): : 44 - 49
  • [50] Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
    Polyakov, AY
    Smirnov, NB
    Govorkov, AV
    Botchkarev, AE
    Nelson, NN
    Fahmi, MME
    Griffin, JA
    Khan, A
    Mohammad, SN
    Johnstone, DK
    Bublik, VT
    Chsherbatchev, KD
    Voronova, M
    SOLID-STATE ELECTRONICS, 2002, 46 (12) : 2141 - 2146