Precursors for CVD growth of nanocrystalline diamond

被引：0
|
作者：
T. Soga
T. Sharda
T. Jimbo
机构：
[1] Nagoya Institute of Technology,Department of Environmental Technology and Urban Planning
[2] Seki Technotron Corp.,Research and Development
来源：
Physics of the Solid State | 2004年 / 46卷
关键词：
Silicon; Microwave; Raman Spectroscopy; Chemical Vapor Deposition; Silicon Substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Various routes to grow nanocrystalline diamond films by the chemical vapor deposition technique are reviewed. Among the various routes, NCD films deposited on mirror-polished silicon substrates by biased enhanced growth by microwave plasma chemical vapor deposition are described in detail. The qualitative concentration of NCD was assessed by Raman spectroscopy and x-ray diffraction patterns of the films. The hardness of the films approaches that of natural diamond at optimized conditions while still having a low amount of stress (<1 GPa).
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页码：720 / 725
页数：5
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