Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

被引：0
|
作者：
Sowmya Palimar
Kasturi V. Bangera
G. K. Shivakumar
机构：
[1] National Institute of Technology Karnataka,Thin Film Laboratory, Physics Department
来源：
Semiconductors | 2012年 / 46卷
关键词：
Zinc Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Room Temperature Conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 Ω−1 cm−1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8.7 × 103 Ω−1 cm−1 is observed and the optical band gap of the films is decreased from 3.25 to 3.2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band.
引用
收藏
页码：1545 / 1548
页数：3
相关论文
共 50 条
  • [41] Optical characterization of Eu-doped β-Ga2O3 thin films
    Gollakota, P.
    Dhawan, A.
    Wellenius, P.
    Lunardi, L. M.
    Muth, J. F.
    Saripalli, Y. N.
    Peng, H. Y.
    Everitt, H. O.
    APPLIED PHYSICS LETTERS, 2006, 88 (22)
  • [42] Twin-induced phase transition from β-Ga2O3 to α-Ga2O3 in Ga2O3 thin films
    Choi, Byeongdae
    Allabergenov, Bunyod
    Lyu, Hong-Kun
    Lee, Seong Eui
    APPLIED PHYSICS EXPRESS, 2018, 11 (06)
  • [43] Nanocrystalline β-Ga2O3 thin film prepared by electron beam evaporation for enhanced photodetection
    Meitei, Shagolsem Romeo
    Devi, Leimapokpam Sophia
    Singh, Naorem Khelchand
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2023, 56 (39)
  • [44] Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition
    Leedy, Kevin D.
    Chabak, Kelson D.
    Vasilyev, Vladimir
    Look, David C.
    Boeckl, John J.
    Brown, Jeff L.
    Tetlak, Stephen E.
    Green, Andrew J.
    Moser, Neil A.
    Crespo, Antonio
    Thomson, Darren B.
    Fitch, Robert C.
    McCandless, Jonathan P.
    Jessen, Gregg H.
    APPLIED PHYSICS LETTERS, 2017, 111 (01)
  • [45] Transparent conducting ZnO:Ga epitaxial films prepared on epi-GaN/Al2O3 (0001) by MOCVD
    Yu, Qiaoqun
    Ma, Jin
    Luan, Caina
    Kong, Lingyi
    Zhu, Zhen
    MATERIALS SCIENCE AND ENGINEERING APPLICATIONS, PTS 1-3, 2011, 160-162 : 634 - 639
  • [46] Transparent conducting In2O3 thin films prepared by ultrasonic spray pyrolysis
    Lee, JH
    Park, BO
    SURFACE & COATINGS TECHNOLOGY, 2004, 184 (01): : 102 - 107
  • [47] Structural, morphological, optical and electrical properties of Ga-doped ZnO transparent conducting thin films
    Yang, Jiao
    Jiang, Yiling
    Li, Linjie
    Gao, Meizhen
    APPLIED SURFACE SCIENCE, 2017, 421 : 446 - 452
  • [48] Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing
    Ohira, Shigeo
    Suzuki, Norihito
    Arai, Naoki
    Tanaka, Masahiko
    Sugawara, Takamasa
    Nakajima, Kazuo
    Shishido, Toetsu
    THIN SOLID FILMS, 2008, 516 (17) : 5763 - 5767
  • [49] β-Ga2O3 nanowires and nanobelts synthesized by thermal evaporation
    Yang, ZX
    Zhu, F
    Wu, YJ
    Zhou, WM
    Zhang, YF
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 27 (03): : 351 - 354
  • [50] Novel nanostructures of β-Ga2O3 synthesized by thermal evaporation
    Yang, ZX
    Zhu, F
    Zhou, WM
    Zhang, YF
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2005, 30 (1-2): : 93 - 95
12345