Nanocrystalline β-Ga2O3 thin film prepared by electron beam evaporation for enhanced photodetection

In this study, e-beam evaporation technique was used to fabricate thin-film (TF) of beta-Ga2O3 on Si-substrate. The average crystallite size was determined to be roughly similar to 39.8 nm. The deposition of beta-Ga2O3 TF appears smooth and devoid of cracks or pits, with an average film thickness of similar to 375 nm. From the ultraviolet (UV)-Vis absorption, the optical bandgap value for beta-Ga2O3 TF was found to be about similar to 4.84 eV. Our study found that the photodetector (PD) had excellent performance, characterized by an extremely low dark current of 4.02 x 10(-8) A at -1 V bias, an I (L)/I (D) ratio over nine times, and the short rise and fall times of .27 s and .059 s. The simultaneous achievement of minimal dark current and quick rise and fall times is remarkable. The beta-Ga2O3 TF PD's remarkable consistency and reproducibility suggest promising practical applications for UV PDs.