Highly conducting and transparent Ga2O3 doped ZnO thin films prepared by thermal evaporation method

被引：0
|
作者：
Sowmya Palimar
Kasturi V. Bangera
G. K. Shivakumar
机构：
[1] National Institute of Technology Karnataka,Thin Film Laboratory, Physics Department
来源：
Semiconductors | 2012年 / 46卷
关键词：
Zinc Oxide; Transparent Conductor; Gallium Oxide; Dope Film; Room Temperature Conductivity;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amorphous zinc oxide thin films are obtained by thermally evaporating pure zinc oxide powder. Films obtained have an excellent conductivity of 90 Ω−1 cm−1 with transparency of up to 90% in the visible region. On doping with gallium oxide a great improvement in the conductivity of up to 8.7 × 103 Ω−1 cm−1 is observed and the optical band gap of the films is decreased from 3.25 to 3.2 eV, retaining the transparency. Measurements of activation energy show that the doped ZnO film has one donor level at 68 meV and other at 26 meV bellow the conduction band.
引用
收藏
页码：1545 / 1548
页数：3
相关论文
共 50 条
  • [31] Preparation and thermal stability of F-doped ZnO transparent conducting thin films
    Cao, L.
    Zhu, L. P.
    Chen, W. F.
    Ye, Z. Z.
    OPTICAL MATERIALS, 2013, 35 (06) : 1293 - 1296
  • [32] Effect of spatial relationship between arc plasma and substrate on the properties of transparent conducting Ga-doped ZnO thin films prepared by vacuum arc plasma evaporation
    Minami, Tadatsugu
    Miyata, Toshihiro
    Honma, Yasunori
    Ito, Tomoyuki
    THIN SOLID FILMS, 2009, 517 (24) : 6824 - 6828
  • [33] Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition
    Suzuki, A
    Matsushita, T
    Wada, N
    Sakamoto, Y
    Okuda, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (1A): : L56 - L59
  • [34] Transparent conducting Ga2O3-In2O3 thin films prepared by pulsed laser deposition using split targets
    Suzuki, Akio
    Fujita, Masami
    Hashimoto, Kazuhiro
    Aoki, Takanori
    Matsushita, Tatsuhiko
    Okuda, Masahiro
    Shinku/Journal of the Vacuum Society of Japan, 1999, 42 (03): : 325 - 328
  • [35] Si doped ZnO thin films for transparent conducting oxides
    Qin, H.
    Liu, H. F.
    Yuan, Y. Z.
    SURFACE ENGINEERING, 2013, 29 (01) : 70 - 76
  • [36] Si doped ZnO thin films for transparent conducting oxides
    Qin, H. (zfjqinh@gmail.com), 1600, Maney Publishing (08):
  • [37] Transparent conducting tin-doped Ga2O3 films deposited on MgAl2O4 (100) substrates by MOCVD
    Mi, Wei
    Li, Zhao
    Luan, Caina
    Xiao, Hongdi
    Zhao, Cansong
    Ma, Jin
    CERAMICS INTERNATIONAL, 2015, 41 (02) : 2572 - 2575
  • [38] Effect of Sn doping on properties of transparent ZnO thin films prepared by thermal evaporation technique
    Sheeba, N. H.
    Vattappalam, Sunil C.
    Naduvath, Johns
    Sreenivasan, P. V.
    Mathew, Sunny
    Philip, Rachel Reena
    CHEMICAL PHYSICS LETTERS, 2015, 635 : 290 - 294
  • [39] Synthesis of β-Ga2O3:Mg Thin Films by Electron Beam Evaporation and Postannealing
    Fan, Weitao
    Li, Sairui
    Ren, Wei
    Yang, Yanhan
    Li, Yixuan
    Liu, Guanghui
    Wang, Weili
    MATERIALS, 2024, 17 (19)
  • [40] Growth of β-Ga2O3 Thin Films on Ga2O3/GaN/Sapphire Template
    Jiao T.
    Li Z.-M.
    Wang Q.
    Dong X.
    Zhang Y.-T.
    Bai S.
    Zhang B.-L.
    Du G.-T.
    Faguang Xuebao/Chinese Journal of Luminescence, 2020, 41 (03): : 281 - 287
12345