Crystallization of amorphous hydrogenated silicon films deposited under various conditions

被引：0
|
作者：
O. A. Golikova
E. V. Bogdanova
U. S. Babakhodzhaev
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2002年 / 36卷
关键词：
Silicon; Crystallization; Silane; Magnetic Material; Basic Material;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The possibility of using the magnetron-assisted silane decomposition technique for the deposition of a-Si:H films as the basic materials for the production of polysilicon is analyzed. It is shown how specific features of the film structure affect the crystallization process.
引用
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页码：1180 / 1183
页数：3
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