Crystallization of amorphous hydrogenated silicon films deposited under various conditions

被引:0
|
作者
O. A. Golikova
E. V. Bogdanova
U. S. Babakhodzhaev
机构
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源
Semiconductors | 2002年 / 36卷
关键词
Silicon; Crystallization; Silane; Magnetic Material; Basic Material;
D O I
暂无
中图分类号
学科分类号
摘要
The possibility of using the magnetron-assisted silane decomposition technique for the deposition of a-Si:H films as the basic materials for the production of polysilicon is analyzed. It is shown how specific features of the film structure affect the crystallization process.
引用
收藏
页码:1180 / 1183
页数:3
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