Modification of the structure and hydrogen content of amorphous hydrogenated silicon films under conditions of femtosecond laser-induced crystallization

被引：0
|
作者：
A. V. Emelyanov
A. G. Kazanskii
P. K. Kashkarov
O. I. Konkov
N. P. Kutuzov
V. L. Lyaskovskii
P. A. Forsh
M. V. Khenkin
机构：
[1] Moscow State University,Department of Physics
[2] Russian Research Centre Kurchatov Institute,Ioffe Physical Technical Institute
[3] Russian Academy of Sciences,undefined
[4] All-Russia Research Institute for Optico-Physical Measurements,undefined
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Femtosecond Laser; Hydrogen Content; Technical Physic Letter; Laser Fluence; Femtosecond Laser Pulse;
D O I：
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中图分类号：
学科分类号：
摘要：
We have studied the Raman spectra of initially amorphous hydrogenated silicon (a-Si:H) films upon their exposure to femtosecond laser-radiation pulses with the fluence varied within 30–155 mJ/cm2. The distribution of the volume fraction of a crystalline phase over the surface of processed films is determined for the first time and a correlation is established between changes in this value and the hydrogen content in a-Si:H films upon the crystallization induced by femtosecond laser radiation.
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页码：141 / 144
页数：3
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