Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12

被引：27

作者：

Wu, J. H. ^{[1
]}

Li, P. W. ^{[1
]}

机构：

[1] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 01期

关键词：

D O I：

10.1088/0268-1242/22/1/S21

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have experimentally fabricated Ge-nanocrystals (ncs) metal-oxide-semiconductor field-effect transistors (MOSFETs) with significant capacitance-voltage hysteresis window, threshold voltage shift and good retention. The Ge-ncs/SiO2 system has a good charge storage capability with a charge loss of 12.5% after 10 years retention. This work shows that the heart of the nonvolatile memory transistors, Ge-ncs, is formed by thermal oxidation of polycrystalline Si0.88Ge0.12, which is a simple method and can be easily adapted in the fabrication of embedded circuits.

引用

页码：S89 / S92

页数：4

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