Ge nanocrystal metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12

被引：27
|
作者：
Wu, J. H. [1 ]
Li, P. W. [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32001, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2007年 / 22卷 / 01期
关键词：
D O I：
10.1088/0268-1242/22/1/S21
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have experimentally fabricated Ge-nanocrystals (ncs) metal-oxide-semiconductor field-effect transistors (MOSFETs) with significant capacitance-voltage hysteresis window, threshold voltage shift and good retention. The Ge-ncs/SiO2 system has a good charge storage capability with a charge loss of 12.5% after 10 years retention. This work shows that the heart of the nonvolatile memory transistors, Ge-ncs, is formed by thermal oxidation of polycrystalline Si0.88Ge0.12, which is a simple method and can be easily adapted in the fabrication of embedded circuits.
引用
收藏
页码：S89 / S92
页数：4
相关论文
共 50 条
  • [21] Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering
    Lee, M. H.
    Hsieh, B. -F.
    Chang, S. T.
    Lee, S. W.
    THIN SOLID FILMS, 2012, 520 (08) : 3379 - 3381
  • [22] Ge/Si quantum-dot metal-oxide-semiconductor field-effect transistor
    Yakimov, AI
    Dvurechenskii, AV
    Kirienko, VV
    Nikiforov, AI
    APPLIED PHYSICS LETTERS, 2002, 80 (25) : 4783 - 4785
  • [23] Structural and optical characterization of Ge nanocrystals showing large nonvolatile memories in metal-oxide-semiconductor structures
    Kim, Sung
    Choi, Suk-Ho
    Park, C. J.
    Cho, K. H.
    Cho, H. Y.
    Elliman, R. G.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2006, 49 (03) : 959 - 962
  • [24] Retention in metal-oxide-semiconductor structures with two embedded self-aligned Ge-nanocrystal layers
    Duguay, S.
    Burignat, S.
    Kern, P.
    Grob, J. J.
    Souifi, A.
    Slaoui, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 837 - 842
  • [25] Strained Si n-channel metal-oxide-semiconductor transistor on relaxed Si1-xGex formed by ion implantation of Ge
    John, S
    Ray, SK
    Quinones, E
    Banerjee, SK
    APPLIED PHYSICS LETTERS, 1999, 74 (14) : 2076 - 2078
  • [26] Comparison of drive currents in metal-oxide-semiconductor field-effect transistors made of Si, Ge, GaAs, InGaAs, and InAs channels
    Lubow, Abigail
    Ismail-Beigi, Sohrab
    Ma, T. P.
    APPLIED PHYSICS LETTERS, 2010, 96 (12)
  • [27] Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors
    Moussavou, Manel
    Cavassilas, Nicolas
    Dib, Elias
    Bescond, Marc
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (11)
  • [28] Charging Behaviour of Metal-Nitride-Oxide-Semiconductor Memory Structures with Embedded Si or Ge Nanocrystals
    Horvath, Zs. J.
    Basa, R.
    Molnar, K. Z.
    Jaszi, T.
    Pap, A. E.
    Molnar, Gy.
    Dobos, L.
    Toth, L.
    Pecz, B.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2013, 5 (04) : 513 - 517
  • [29] Variation of Surface Roughness on Ge Substrate by Cleaning in Deionized Water and its Influence on Electrical Properties in Ge Metal-Oxide-Semiconductor Field-Effect Transistors
    Lee, Choong Hyun
    Nishimura, Tomonori
    Tabata, Toshiyuki
    Nagashio, Kosuke
    Kita, Koji
    Toriumi, Akira
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (10)
  • [30] Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
    Sasada, Takashi
    Nakakita, Yosuke
    Takenaka, Mitsuru
    Takagi, Shinichi
    JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)
12345