Monolithic integration of near-infrared Ge photodetectors with Si complementary metal-oxide-semiconductor readout electronics

Using a low-temperature technology for polycrystalline Ge deposition, we report on the monolithic integration of an array of near-infrared Ge photodiodes on Si complementary metal-oxide-semiconductor (CMOS) electronics. The integrated microsystem consists of a linear array of 120x120 mum(2) pixels, an analog CMOS multiplexer and a transimpedance amplifier. The resulting photoresponse covers the near-infrared up to 1.6 mum. (C) 2002 American Institute of Physics.