Effect of High-K Dielectric on Drain Current of ID-DG MOSFET using Ortiz-Conde Model

被引：0

作者：

Deyasi, Arpan ^{[1
]}

Chowdhury, Anal Roy ^{[2
]}

Roy, Krishnendu ^{[2
]}

Sarkar, Angsuman ^{[3
]}

机构：

[1] RCC Inst Informat Technol, Dept Elect & Commun Engn, Kolkata, India

[2] Acharya Prafulla Chandra Coll, Dept Elect Sci, New Barrackpore, India

[3] Kalyani Govt Engn Coll, Dept Elect & Commun Engn, Kalyani, W Bengal, India

来源：

PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON) | 2018年

关键词：

Double-gate MOSFET; Ortiz-Conde model; High-K dielectric; Static characteristics; Transfer characteristics; Pinch-off voltage;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Drain-to-source current of independently-driven double gate (ID-DG) MOSFET is analytically computed following Ortiz-Conde model in sub 100 nm channel length in presence of different high-K dielectrics. Fowler-Nordheim tunneling concept is invoked due to reduced dielectric thickness; and front gate control is tailored to analyze the effect on current and pinch-off voltage. Excellent agreement is observed with published literatures for high front-gate voltage when device is lightly doped; which speaks in favor of the work within dimensional constraints. Percentage change of current considering body effect is estimated for different gate bias. Result speaks in favor of low power analog applications.

引用

页码：176 / 181

页数：6

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