InGaAs Double-Gate Fin-Sidewall MOSFET

被引：0
|
作者：
Vardi, Alon [1 ]
Zhao, Xin [1 ]
del Alamo, Jesus A. [1 ]
机构：
[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA
来源：
2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC) | 2014年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：219 / +
页数：2
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