Thermal characterization of a double-gate silicon-on-insulator MOSFET

被引：0

作者：

Pandey, Manoj K. ^{[1
]}

Sen, Sujata ^{[1
]}

Gupta, R.S. ^{[1
]}

机构：

[1] Semiconduct. Device Res. Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India

来源：

Journal of Physics D: Applied Physics | / 32卷 / 03期

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摘要：

引用

页码：344 / 349

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