Thermal characterization of a double-gate silicon-on-insulator MOSFET

被引:0
|
作者
Pandey, Manoj K. [1 ]
Sen, Sujata [1 ]
Gupta, R.S. [1 ]
机构
[1] Semiconduct. Device Res. Laboratory, Department of Electronic Science, University of Delhi South Campus, New Delhi 110021, India
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:344 / 349
相关论文
共 50 条
  • [21] Pearson-IV type doping distrubution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator mosfet
    Kushwaha, Alok
    Pandey, Manoj K.
    Gupta, A. K.
    MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2007, 49 (04) : 979 - 986
  • [22] Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Rodriguez, N.
    Cristoloveanu, S.
    Gamiz, F.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (08)
  • [23] Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors
    Guoliang TIAN
    Jinshun BI
    Gaobo XU
    Kai XI
    Xueqin YANG
    Majumdar SANDIP
    Huaxiang YIN
    Qiuxia XU
    Wenwu WANG
    Science China(Information Sciences), 2020, 63 (12) : 278 - 280
  • [24] Evidence for mobility enhancement in double-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors
    Rodriguez, N.
    Cristoloveanu, S.
    Gámiz, F.
    Journal of Applied Physics, 2007, 102 (08):
  • [25] Comparative Study of Single Gate and Double Gate Fully Depleted Silicon on Insulator MOSFET
    Devi, Sakshi
    Singh, Avtar
    Lorenzo, Rohit
    Chaudhury, Saurabh
    2015 COMMUNICATION, CONTROL AND INTELLIGENT SYSTEMS (CCIS), 2015, : 357 - 362
  • [26] EFFECT OF GRAIN SIZE ON THE THRESHOLD VOLTAGE FOR DOUBLE-GATE POLYCRYSTALINE SILICON MOSFET
    Chandra, Mahesh
    Panwar, Alka
    Tyag, B. P.
    JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 474 - 478
  • [27] A Novel Double-Gate MOSFET Architecture as an Inverter
    Aakansha
    Kumar, Manoj
    IETE JOURNAL OF RESEARCH, 2023, 69 (11) : 8218 - 8225
  • [28] Integration challenges for double-gate MOSFET technologies
    Maszara, WP
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 59 - 68
  • [29] A High Temperature Silicon Carbide MOSFET Power Module with Integrated Silicon-on-Insulator Based Gate Drive
    Wang, Zhiqiang
    Shi, Xiaojie
    Tolbert, Leon M.
    Wang, Fred
    Liang, Zhenxian
    Costinett, Daniel
    Blalock, Benjamin J.
    2014 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2014, : 4373 - 4380
  • [30] On the performance of Double-Gate MOSFET circuit applications
    Hassoune, Ilham
    O'Connor, Ian
    Navarro, David
    2007 IEEE NORTH-EAST WORKSHOP ON CIRCUITS AND SYSTEMS, 2007, : 89 - 92