Modeling of Photocurrent Response for Integrated Optoelectric Circuit Simulation

被引:0
|
作者
Shintaku, Yasuhiro [1 ]
Kusu, Shota [1 ]
Miyoshi, Teppei [1 ]
Suzuki, Gaku [1 ]
Konno, Kohkichi [1 ]
Miura-Mattausch, Mitiko [2 ]
机构
[1] Hiroshima Univ, Advacned Sci Mattaer, Higashihiroshima 7398530, Japan
[2] Hiroshima Univ, HiSIM Res Ctr, Higashihiroshima 7398530, Japan
关键词
photodiode; compact modeling; carrier generation; continuity equation; HiSIM-PD; I-N PHOTODIODE;
D O I
10.1109/isdcs.2019.8719255
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
The photodiode model HiSIM-PD has been developed for circuit integration by considering the dynamic carrier generation mechanism explicitly. To predict transient photocurrent characteristics accurately for any device structure as well as any bias condition different electric field distributions in the device causing different carrier transit dynamics are distinguished. It is verified that the extended HiSIM-PD is applicable for integrated circuit simulation predicting generated current response accurately for any operating conditions and device structures.
引用
收藏
页数:4
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