3-D Modeling of Fringing Gate Capacitance in Gate-all-around Cylindrical Silicon Nanowire MOSFETs
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作者:
An, TaeYoon
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机构:
Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, Gyeonggi Do, South KoreaSungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, Gyeonggi Do, South Korea
An, TaeYoon
[1
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机构:
Kim, SoYoung
[1
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机构:
[1] Sungkyunkwan Univ, Coll Informat & Commun Engn, Suwon, Gyeonggi Do, South Korea
来源:
2013 18TH INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2013)
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2013年
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D O I:
暂无
中图分类号:
TP301 [理论、方法];
学科分类号:
081202 ;
摘要:
In this paper, an analytical model for fringing gate capacitance in gate-all-around cylindrical silicon nanowire MOSFETs (SNWTs) is proposed. The fringing gate capacitances of the SNWT are divided into three parts: sidewall capacitance C-side; parallel capacitance C-gsd; perpendicular capacitance C-gex. Each capacitance is calculated using the following methods: conformal mapping, integral and non-dimensionalization. The proposed model is verified with a three-dimensional field solver, Raphael. Based on the proposed model, the fringing capacitance can be easily predicted in the vertically and horizontally stacked multi-wire SNWTs.
机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Zhang, Lining
Lou, Haijun
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机构:
Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
Lou, Haijun
He, Jin
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机构:
Peking Univ, Shenzhen Grad Sch, Sch Comp & Informat Engn, Shenzhen 518055, Peoples R China
Peking Univ, PKU HKUST Shenzhen Hong Kong Inst, Shenzhen SOC Key Lab, Shenzhen 518055, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China
He, Jin
Chan, Mansun
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机构:
Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R ChinaHong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China