The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films on ITO/glass Substrate

被引：0
|
作者：
Tzou, Wen-Cheng [1 ]
Cheng, Chien-Min [2 ]
Chen, Kai-Huang [3 ]
Yang, Hung-Chi [2 ]
Shen, Guan-Hung [4 ]
Yang, Cheng-Fu [4 ]
机构：
[1] Southern Taiwan Univ, Dept Electroopt Engn, Tainan, Taiwan
[2] Southern Taiwan Univ, Dept Elect Engn, Tainan, Taiwan
[3] Tung Fang Inst Technolo, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan
[4] Natl Kaohsiung Univ, Dept Chem & Mat Engn, Kaohsiung, Taiwan
来源：
HIGH-PERFORMANCE CERAMICS VI | 2010年 / 434-435卷
关键词：
Ba(Zr0.1Ti0.9)O-3; perovskite structure; ferroelectric; ITO/glass; FeRAM; THIN-FILMS; TEMPERATURE;
D O I：
10.4028/www.scientific.net/KEM.434-435.289
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Perovskite Ba(Zr0.1Ti0.9)O-3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550 degrees C, and an oxygen concentration of 40%. From the SEM cross-sectional observation, the deposition rate were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased to 650 degrees C. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.
引用
收藏
页码：289 / +
页数：2
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