The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films on ITO/glass Substrate

Perovskite Ba(Zr0.1Ti0.9)O-3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550 degrees C, and an oxygen concentration of 40%. From the SEM cross-sectional observation, the deposition rate were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased to 650 degrees C. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.