The Influence of Annealing Treatment on Physics and Electrical Characteristics of Ba(Zr0.1Ti0.9)O3 Ferroelectric Films on ITO/glass Substrate

被引：0
|
作者：
Tzou, Wen-Cheng [1 ]
Cheng, Chien-Min [2 ]
Chen, Kai-Huang [3 ]
Yang, Hung-Chi [2 ]
Shen, Guan-Hung [4 ]
Yang, Cheng-Fu [4 ]
机构：
[1] Southern Taiwan Univ, Dept Electroopt Engn, Tainan, Taiwan
[2] Southern Taiwan Univ, Dept Elect Engn, Tainan, Taiwan
[3] Tung Fang Inst Technolo, Dept Elect Engn & Comp Sci, Kaohsiung, Taiwan
[4] Natl Kaohsiung Univ, Dept Chem & Mat Engn, Kaohsiung, Taiwan
来源：
HIGH-PERFORMANCE CERAMICS VI | 2010年 / 434-435卷
关键词：
Ba(Zr0.1Ti0.9)O-3; perovskite structure; ferroelectric; ITO/glass; FeRAM; THIN-FILMS; TEMPERATURE;
D O I：
10.4028/www.scientific.net/KEM.434-435.289
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Perovskite Ba(Zr0.1Ti0.9)O-3 (BZ1T9) ferroelectric thin films well deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices are produced and investigated. The sputtering parameters of as-deposited BZ1T9 thin films were rf power of 160 W, chamber pressure of 10 mTorr, substrate temperature of 550 degrees C, and an oxygen concentration of 40%. From the SEM cross-sectional observation, the deposition rate were about 2.5 nm/min. Additionally, the maximum dielectric constant and leakage current density of annealed BZT films under the rapid temperature annealing would be increased, as the temperature increased to 650 degrees C. Further, the maximum remnant polarization and coercive field of BZT films were found and calculated from the p-E curves.
引用
收藏
页码：289 / +
页数：2
相关论文
共 50 条
  • [1] The Ferroelectric Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Films under Post-Annealing Treatment for Applications in Nonvolatile Memory Devices
    Chen, Kai-Huang
    Tsai, Jen-Hwan
    Wu, Chia-Lin
    Lin, Jian-Yang
    Cheng, Chien-Min
    ADVANCED MATERIALS, PTS 1-4, 2011, 239-242 : 895 - +
  • [2] Fabrication and characteristics of Ba(Zr0.1,Ti0.9)O3 thin films on glass substrate
    Chen, Kai-Huang
    Chen, Ying-Chung
    Yang, Cheng-Fu
    Chang, Ting-Chang
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (2-3) : 461 - 464
  • [3] Fabrication and Electrical Characteristics of Metal-Ferroelectric Ba(Zr0.1Ti0.9)O3 Film-Insulator-Silicon Structure
    Chen, Kai-Huang
    Cheng, Chien-Min
    Lin, Chun-Cheng
    Tsai, Jen-Hwan
    INTEGRATED FERROELECTRICS, 2013, 143 (01) : 40 - 46
  • [4] The Effect of RF Power on the Characteristics of Ba(Zr0.1Ti0.9)O3 Thin Film
    Chen, Kai-Huang
    Yang, Cheng-Fu
    Tzou, Wen-Cheng
    Huang, Chien-Jung
    Chou, Dei-Wei
    FERROELECTRICS, 2009, 384 : 166 - 173
  • [5] Electrical and physical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for nonvolatile memory devices application
    Chen, Kai-Huang
    Chen, Ying-Chung
    Chia, Wei-Kuo
    Chen, Zhi-Sheng
    Yang, Cheng-Fu
    Chung, Ho-Hua
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 75 - +
  • [6] Electrical characterization of Ba(Zr0.1Ti0.9)O3 thin films grown by pulsed laser ablation technique
    Halder, S
    Bhattacharyya, S
    Krupanidhi, SB
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 95 (02): : 124 - 130
  • [7] Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
    Yang, Cheng-Fu
    Chen, Kai-Huang
    Chen, Ying-Chung
    Chang, Ting-Chang
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2008, 90 (02): : 329 - 331
  • [8] Physical and electrical characteristics of Ba(Zr0.1Ti0.9)O3 thin films under oxygen plasma treatment for applications in nonvolatile memory devices
    Cheng-Fu Yang
    Kai-Huang Chen
    Ying-Chung Chen
    Ting-Chang Chang
    Applied Physics A, 2008, 90 : 329 - 331
  • [9] Reliability of Ba(Zr0.1Ti0.9)O3 ferroelectric thin films under various frequencies for nonvolatile memory application
    Chen, Kai-Huang
    Cheng, Chien-Chuan
    Chen, Ying-Chung
    Chang, Ting-Chang
    HIGH-PERFORMANCE CERAMICS IV, PTS 1-3, 2007, 336-338 : 73 - +
  • [10] Polarization fatigue of ferroelectric Pb(Zr0.1Ti0.9)O3 thin films: Temperature dependence
    Wang, Y
    Wang, KF
    Zhu, C
    Liu, JM
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (04)
12345