Single transistor primitive for timing and power modelling of CMOS gates

被引:4
|
作者
Chatzigeorgiou, A [1 ]
Nikolaidis, S
机构
[1] Aristotelian Univ Salonika, Dept Comp Sci, GR-54006 Salonika, Greece
[2] Aristotelian Univ Salonika, Dept Phys, GR-54006 Salonika, Greece
关键词
D O I
10.1080/002072100415675
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An accurate and efficient method for modelling CMOS gates by a single equivalent transistor is introduced in this paper. The output waveform of a CMOS inverter is obtained by solving the circuit differential equation considering only the conducting transistor of the inverter. The effect of the short-circuiting transistor is incorporated as a differentiation of the width of the conducting transistor. The proposed model is the simplest primitive that can be used in order to obtain the propagation delay and short-circuit power dissipation of CMOS gates. Consequently, it can offer significant speed improvement to existing dynamic timing and power simulators while maintaining a sufficient level of accuracy.
引用
收藏
页码:1227 / 1238
页数:12
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