Compact Modeling of SOI-LDMOS Including Quasi-Saturation Effect

被引：0

作者：

Lekshmi, T. ^{[1
]}

Mittal, Amit Kumar ^{[1
]}

DasGupta, Amitava ^{[1
]}

Chakravorty, Anjan ^{[1
]}

DasGupta, Nandita ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY | 2009年

关键词：

LDMOS; quasi-saturation; compact model; DC modeling; SOI technology;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a physics-based compact de model for high voltage silicon on insulator lateral double diffused MOS (SOI-LDMOS) transistor, assuming uniform doping for the channel. It uses MM20 model for the channel and drift region under the thin gate oxide, and proposes a new model for the drift region under the field oxide. This model shows that the current at higher gate voltages in SOI-LDMOS, is limited by the velocity saturation in the drift region under the field oxide, which determines the device behavior in the quasi-saturation region. The model exhibits high level of accuracy over wide bias ranges.

引用

页码：114 / 117

页数：4

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