Compact Modeling of SOI-LDMOS Including Quasi-Saturation Effect

被引：0

作者：

Lekshmi, T. ^{[1
]}

Mittal, Amit Kumar ^{[1
]}

DasGupta, Amitava ^{[1
]}

Chakravorty, Anjan ^{[1
]}

DasGupta, Nandita ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India

来源：

2009 2ND INTERNATIONAL WORKSHOP ON ELECTRON DEVICES AND SEMICONDUCTOR TECHNOLOGY | 2009年

关键词：

LDMOS; quasi-saturation; compact model; DC modeling; SOI technology;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

This paper presents a physics-based compact de model for high voltage silicon on insulator lateral double diffused MOS (SOI-LDMOS) transistor, assuming uniform doping for the channel. It uses MM20 model for the channel and drift region under the thin gate oxide, and proposes a new model for the drift region under the field oxide. This model shows that the current at higher gate voltages in SOI-LDMOS, is limited by the velocity saturation in the drift region under the field oxide, which determines the device behavior in the quasi-saturation region. The model exhibits high level of accuracy over wide bias ranges.

引用

页码：114 / 117

页数：4

共 50 条

[41] Modeling of Induction Motor Including the Saturation Effect Using the Finite Element Method
Palma Garcia, Modesto Tomas
Luyo, Jaime E.
PROCEEDINGS OF THE 2016 IEEE ANDESCON, 2016,
[42] Modeling of Double Star Induction Machine Including Magnetic Saturation and Skin effect
Kouki, Hajer
Ben Fredj, Mouldi
Rehaoulia, Habib
2013 10TH INTERNATIONAL MULTI-CONFERENCE ON SYSTEMS, SIGNALS & DEVICES (SSD), 2013,
[43] Improved modeling of flicker noise including velocity saturation effect in FinFETs and experimental validation
Goel, Ravi
Wang, Weike
Chauhan, Yogesh Singh
MICROELECTRONICS JOURNAL, 2021, 110
[44] Compact DC and Quasi-Static Capacitances Modeling of a-Si:H TFTs, Including Parasitic Capacitances
Lime, Francois
Cerdeira, Antonio
Estrada, Magali
Pashkovich, Andrei
Iniguez, Benjamin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3384 - 3389
[45] Coupled magnetic circuit modeling of the stator windings faults of induction machines including saturation effect
Houdouin, G
Barakat, G
Dakyo, B
Henao, H
Capolino, GA
2004 IEEE International Conference on Industrial Technology (ICIT), Vols. 1- 3, 2004, : 148 - 153
[46] Modeling and analysis of a single-phase synchronous-reluctance machine including saturation effect
Ojo, O
Ginart, A
Omozusi, O
Jimoh, AA
IAS '97 - CONFERENCE RECORD OF THE 1997 IEEE INDUSTRY APPLICATIONS CONFERENCE / THIRTY-SECOND IAS ANNUAL MEETING, VOLS 1-3, 1997, : 294 - 301
[47] A Two-Dimensional Modeling Procedure to Estimate the Loss Equivalent Resistance Including the Saturation Effect
Ana Salas, Rosa
MATERIALS, 2013, 6 (11) : 5159 - 5170
[48] MODELING OF A DUAL STATOR WINDING INDUCTION MACHINE INCLUDING THE EFFECT OF MAIN FLUX LINKAGE MAGNETIC SATURATION
Wu, Zhiqiao
Ojo, Olorunfemi
CONFERENCE RECORD OF THE 2006 IEEE INDUSTRY APPLICATIONS CONFERENCE, FORTY-FIRST IAS ANNUAL MEETING, VOL 1-5, 2006, : 465 - 472
[49] Compact modeling for drain current of short-channel MOSFETs including source/drain resistance effect
Ho, CS
Liou, JJ
Lo, HL
Chang, YH
Chang, C
Yu, K
2004: 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, VOLS 1- 3, PROCEEDINGS, 2004, : 930 - 934
[50] Compact Modeling of Drain Current Thermal Noise in FDSOI MOSFETs Including Back-Bias Effect
Sahu, Yogendra
Kushwaha, Pragya
Dasgupta, Avirup
Hu, Chenming
Chauhan, Yogesh Singh
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2017, 65 (07) : 2261 - 2270

← 1 2 3 4 5 →