AN ACCURATE LARGE-SIGNAL MODEL FOR RF SOI LDMOS INCLUDING SELF-HEATING EFFECT

An accurate RF SOI LDMOS large-signal equivalent circuit model based on NXP MOS Model 20 (MM20) is presented. The avalanche effect and the power dissipation caused by self-heating are described. The RF parasitic elements are extracted directly from measured S-parameters with analytical methods. Then their final values are obtained quickly and accurately through necessary optimization. The model is validated in DC, AC small-signal, and large-signal analyses for an RF SOI LDMOS of 20-fingers (channel mask length, L=1 mu m, finger width, W=50 mu m) gate with high resistivity substrate and body-contact. Excellent agreement is achieved between simulated and measured results for DC, S-parameters (10MHz similar to 20.01GHz), and power characteristics, which shows our model is accurate and reliable. MM20 is improved for RF SOI LDMOS large-signal applications. This model has been implemented in Verilog-A using the ADS circuit simulator (hpeesofsim).