A physical large-signal model for GaN HEMTS including self-heating and trap-related dispersion

被引：9
|
作者：
Mari, D. [1 ]
Bernardoni, M. [1 ]
Sozzi, G. [1 ]
Menozzi, R. [1 ]
Umana-Membreno, G. A. [2 ]
Nener, B. D. [2 ]
机构：
[1] Univ Parma, Dept Informat Engn, I-43100 Parma, Italy
[2] Univ Western Australia, Sch Elect Elect & Comp Engn, Perth, WA 6009, Australia
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 02期
关键词：
D O I：
10.1016/j.microrel.2010.09.025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We show results of a self-consistent large-signal electro-thermal GaN HEMT model that includes trap-related and self-heating dispersion effects. Both self-heating and trap dynamics are treated with a strictly physical approach that makes it easier to link the model parameter with the physical HEMT structure and material characteristics. The model, implemented in ADS, is applied to measured DC data taken at ambient temperatures between 200 K and 400 K, with excellent results. Several examples are given of dynamic HEMT simulation, showing the co-existence and the interaction of temperature- and trap-related dispersive effects. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码：229 / 234
页数：6
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