Electrical Characteristics Assessment of Gate Metal and Source Pocket Engineered DG-TFET for low Power Analog Applications

被引：0

作者：

Madan, Jaya ^{[1
]}

Kaur, Rupinder ^{[1
]}

Sharma, Rajnish ^{[1
]}

Pandey, Rahul ^{[1
]}

Chaujar, Rishu ^{[2
]}

机构：

[1] Chitkara Univ, Inst Engn & Technol, Dept Elect & Commun Engn, Rajpura, Punjab, India

[2] Delhi Technol Univ, Dept Appl Phys, Microelect Res Lab, Bawana Rd, Delhi 110042, India

来源：

PROCEEDINGS OF 2018 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES KOLKATA CONFERENCE (IEEE EDKCON) | 2018年

关键词：

Double gate; gate metal engineering; nonlocal-band to band tunneling; n plus source pocket; tunnel FET; FIELD-EFFECT TRANSISTORS; TUNNEL FET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel Field Effect Transistors (TFET) offers low leakage current and allows good scalability, however, they suffer from low ON-current. Here, in this work, the gate metal engineering scheme and n+ source pocket scheme has been integrated to overcome the major roadblocks of TFET. In this regard, 4 types of TFET architectures, namely the double gate TFET (DG-TFET), gate metal engineered DG-TFET (GME-DG-TFET), source pocket DG-TFET (SP-DG-TFET), and GME-SP-DG-TFET (which integrate the merits of GME and SP engineering) are investigated. The electrical characteristics and analog parameters in terms of surface potential, energy bands, band to band tunneling rate, electric field, drain current, current switching ratio, ambipolar current, threshold voltage, and subthreshold swing are assessed for all the devices. It is investigated that the combined merits of GME and SP consequently result in superior analog performance of DG-TFET. Remarkable improvement in terms of the ON-state drain current from an order of 10(10)A to 10(12) A and decrease in V-th of 27.71% has been obtained for GME-SP-DG-TFET as compared to DG-TFET.

引用

页码：358 / 362

页数：5

共 45 条

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