Zero-temperature-coefficient biasing point of a fully-depleted SOI MOSFET

被引：12

作者：

Tan, TH ^{[1
]}

Goel, AK ^{[1
]}

机构：

[1] Michigan Technol Univ, Dept Elect & Comp Engn, Houghton, MI 49931 USA

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2003年 / 37卷 / 05期

关键词：

MOSFET; SOI; simulation; TCAD;

D O I：

10.1002/mop.10920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gate characteristics (I-D-V-GS) of fully depleted, lightly doped, enhanced SOI n-MOSFET are simulated over a wide range of operating temperature (300-600 K) by using the SILVACO TCAD tools. Simulation results show that there exists a biasing point where the drain current and the transconductance arc temperature independent. Such a point is known as the zero-temperature coefficient (ZTC) bias point. The drain-current ZTC points arc identified in both the linear and saturation regions. The transconductance ZTC exists only in the saturation region. (C) 2003 Wiley Periodicals, Inc. Microwave Opt Technol Lett 37: 366-370, 2003; Published online in Wiley Inter-Science (www.interscience.wiley.com). DOI 10.1002/mop.10920.

引用

页码：366 / 370

页数：5

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