Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser

被引：8

作者：

Okumura, Tadashi ^{[1
]}

Oda, Katsuya ^{[1
]}

Kasai, Junichi ^{[1
]}

Sagawa, Misuzu ^{[2
]}

Suwa, Yuji ^{[1
]}

机构：

[1] Hitachi Ltd, Ctr Exploratory Res, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

[2] Hitachi Ltd, Ctr Technol Innovat Elect, 1-280 Higashi Koigakubo, Kokubunji, Tokyo 1858601, Japan

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 09期

关键词：

GE; ABSORPTION; SI;

D O I：

10.1364/OE.24.009132

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Silicon (Si) monolithic lasers are key devices in large-scale, high-density photonic integrated circuits. Germanium (Ge) is promising as an active layer due to the complementary metal-oxide semiconductor process compatibility with Si. A net optical gain from Ge is essential to demonstrate lasing operation. We fabricated Ge waveguides and investigated the n-type doping effect on the net optical gain. The estimated net gain of the n-Ge waveguide increased from -2200 to -500/cm, namely reducing loss, under optically pumped condition. (C) 2016 Optical Society of America

引用

页码：9132 / 9139

页数：8

共 50 条

[21] Optical gain in Er-Yb doped waveguides fabricated by femtosecond laser pulses
Osellame, R
Taccheo, S
Cerullo, G
Marangoni, M
Polli, D
Ramponi, R
Laporta, P
De Silvestri, S
ELECTRONICS LETTERS, 2002, 38 (17) : 964 - 965
[22] Stimulated emission in erbium-doped silicon structures under optical pumping
Bresler, MS
Gusev, OB
Terukov, EI
Yassievich, IN
Zakharchenya, BP
Emel'yanov, VI
Kamenev, BV
Kashkarov, PK
Konstantinova, EA
Timoshenko, VY
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3): : 52 - 55
[23] HIGH-STRESS OPTICAL BIREFRINGENCE IN PURE AND DEGENERATE N-TYPE GERMANIUM
FELDMAN, A
PHYSICAL REVIEW, 1966, 150 (02): : 748 - &
[24] Optical properties of n-type asymmetric triple δ-doped quantum well under external fields
Ungan, F.
Bahar, M. K.
Mora-Ramos, M. E.
PHYSICA SCRIPTA, 2020, 95 (05)
[25] The structure and optical properties of n-type and p-type porous silicon
Hong, KP
Lee, CM
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S671 - S675
[26] Optical gain in dye-doped polymer waveguides using oxidized porous silicon cladding
Navarro-Urrios, Daniel
Ghulinyan, Mher
Bettotti, Paolo
Capuj, Nestor
Oton, Claudio J.
Lahoz, Fernando
Martin, Inocencio R.
Pavesi, Lorenzo
PHOTONIC MATERIALS, DEVICES, AND APPLICATIONS II, 2007, 6593
[27] Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si
Liu, Jifeng
Sun, Xiaochen
Pan, Dong
Wang, Xiaoxin
Kimerling, Lionel C.
Koch, Thomas L.
Michel, Jurgen
OPTICS EXPRESS, 2007, 15 (18) : 11272 - 11277
[28] Optical properties of n-type porous silicon obtained by photoelectrochemical etching
Chen, CH
Chen, YF
SOLID STATE COMMUNICATIONS, 1999, 111 (12) : 681 - 685
[29] Structural and optical properties of n-type porous silicon fabricated in dark
Das, M.
Sarkar, D.
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 2013, 51 (10) : 724 - 727
[30] The optical property of tensile-strained n-type doped Ge
Huang Shi-Hao
Li Cheng
Chen Cheng-Zhao
Yuan-Yu, Zheng
Lai Hong-Kai
Chen Song-Yan
ACTA PHYSICA SINICA, 2012, 61 (03)

← 1 2 3 4 5 →