共 50 条
- [1] FORCED BIREFRINGENCE IN N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 934 - &
- [2] PIEZORESISTANCE IN DEGENERATE N-TYPE GERMANIUM HELVETICA PHYSICA ACTA, 1962, 35 (7-8): : 511 - &
- [3] HIGH-STRESS PIEZORESISTANCE IN DEGENERATE ARSENIC-DOPED GERMANIUM PHYSICAL REVIEW, 1965, 139 (5A): : 1628 - &
- [4] MAGNETORESISTANCE OF DEGENERATE N-TYPE GERMANIUM AND SILICON SOVIET PHYSICS-SOLID STATE, 1963, 5 (05): : 1077 - 1079
- [5] DEGENERATE N-TYPE GERMANIUM LAYER IN HETEROJUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 161 - &
- [6] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &
- [7] EDSR INVESTIGATION OF N-TYPE SILICON DEFORMED UNDER HIGH-STRESS PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 138 (02): : 607 - 615
- [8] THEORETICAL HIGH-STRESS OPTICAL BIREFRINGENCE AND PIEZORESISTANCE IN HEAVILY DOPED GERMANIUM - ARGUMENTS AGAINST BAND TAILING PHYSICAL REVIEW B, 1983, 27 (10): : 6234 - 6245
- [10] ULTRASONIC ATTENUATION IN PURE AND DOPED N-TYPE GERMANIUM PHYSICAL REVIEW B, 1973, 7 (10): : 4640 - 4643