Multiple-Event Direct to Histogram TDC in 65nm FPGA Technology

被引:0
|
作者
Dutton, Neale [1 ,2 ]
Vergote, Johannes [1 ,2 ]
Gnecchi, Salvatore [1 ,2 ]
Grant, Lindsay [1 ]
Lee, David [1 ]
Pellegrini, Sara [1 ]
Rae, Bruce [1 ]
Henderson, Robert [2 ]
机构
[1] ST Microelect Imaging Div, Edinburgh, Midlothian, Scotland
[2] Univ Edinburgh, Edinburgh, Midlothian, Scotland
关键词
TIME; SENSOR;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel multiple-event Time to Digital Converter (TDC) with direct to histogram output is implemented in a 65nm Xilinx Virtex 5 FPGA. The delay-line based architecture achieves 16.3 ps temporal accuracy over a 2.86ns dynamic range. The measured maximum conversion rate of 6.17 Gsamples/s and the sampling rate of 61.7 Gsamples/s are the highest published in the literature. The system achieves a linearity of -0.9/+3 LSB DNL and -1.5/+5 LSB INL. The TDC is demonstrated in a direct time of flight optical ranging application with 12mm error over a 350mm range.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] 65nm SOICMOS technology for high performance microprocessor application
    Fung, Samuel K. H.
    Grudowski, P. A.
    Wu, C. H.
    Kolagunta, V.
    Cave, N.
    Yang, C. T.
    Lian, S. J.
    Adams, V.
    Zia, O.
    Min, B.
    Grove, N.
    Chen, K. H.
    Liang, W. J.
    Lee, D. H.
    Huang, H. T.
    Cheek, J.
    Tuan, H. C.
    2006 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2006, : 58 - +
  • [42] Advanced photomask repair technology for 65nm lithography (3)
    Itou, Y
    Tanaka, Y
    Sugiyama, Y
    Hagiwara, R
    Takahashi, H
    Takaoka, O
    Kozakai, T
    Matsuda, O
    Suzuki, K
    Okabe, M
    Kikuchi, S
    Uemoto, A
    Yasaka, A
    Adachi, T
    Nishida, N
    Photomask and Next-Generation Lithography Mask Technology XII, Pts 1 and 2, 2005, 5853 : 1000 - 1008
  • [43] Single Event Multiple Transient (SEMT) Measurements in 65 nm Bulk Technology
    Evans, Adrian
    Glorieux, Maximilien
    Alexandrescu, Dan
    Polo, Cesar Boatella
    Ferlet-Cavrois, Veronique
    2016 16TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), 2016,
  • [44] Advanced photomask repair technology for 65nm lithography (1)
    Itou, Y
    Tanaka, Y
    Yoshioka, N
    Sugiyama, Y
    Hagiwara, R
    Takahashi, H
    Takaoka, O
    Tashiro, J
    Suzuki, K
    Okabe, M
    Kikuchi, S
    Uemoto, A
    Yasaka, A
    Adachi, T
    Nishida, N
    Ozawa, T
    PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI, 2004, 5446 : 301 - 312
  • [45] A 65nm node strained SOI technology with slim spacer
    Yang, FL
    Huang, CC
    Chen, HY
    Liaw, JJ
    Chung, TX
    Chen, HW
    Chang, CY
    Huang, CC
    Chen, KH
    Lee, DH
    Tsao, HC
    Wen, CK
    Cheng, SM
    Sheu, YM
    Su, KW
    Chen, CC
    Lee, TL
    Chen, SC
    Chen, CJ
    Chang, CH
    Lu, JC
    Chang, W
    Hou, CP
    Chen, YH
    Chen, KS
    Lu, M
    Kung, LW
    Chou, YJ
    Liang, FJ
    You, JW
    Shu, KC
    Chang, BC
    Shin, JJ
    Chen, CK
    Gau, TS
    Chan, BW
    Huang, YC
    Tao, HJ
    Chen, JH
    Chen, YS
    Yeo, YC
    Fung, SKH
    Diaz, CH
    Wu, CMM
    Lin, BJ
    Liang, MS
    Sun, JYC
    Hu, CM
    2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 627 - 630
  • [46] Investigation of Process Variation on Register Files in 65nm Technology
    Arulvani, M.
    Karthikeyan, S. S.
    Neelima, N.
    2013 INTERNATIONAL CONFERENCE ON EMERGING TRENDS IN VLSI, EMBEDDED SYSTEM, NANO ELECTRONICS AND TELECOMMUNICATION SYSTEM (ICEVENT 2013), 2013,
  • [47] The Design of a 16-Channel 15 ps TDC Implemented in a 65 nm FPGA
    Zhao, Lei
    Hu, Xueye
    Liu, Shubin
    Wang, Jinhong
    Shen, Qi
    Fan, Huanhuan
    An, Qi
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (05) : 3532 - 3536
  • [48] Radiation Tolerant SRAM Cell Design in 65nm Technology
    Wang, JianAn
    Wu, Xue
    Tian, Haonan
    Li, Lixiang
    Shi, Shuting
    Chen, Li
    JOURNAL OF ELECTRONIC TESTING-THEORY AND APPLICATIONS, 2021, 37 (02): : 255 - 262