Recent progress in the repair accuracy of the focused-ion-beam mask repair system

被引:1
|
作者
Aita, K [1 ]
Yasaka, A [1 ]
Kitamura, T [1 ]
Matsumura, H [1 ]
Satoh, Y [1 ]
Nakamura, H [1 ]
Fujikawa, J [1 ]
Tsuchiya, K [1 ]
Noguchi, S [1 ]
机构
[1] SEIKO INSTRUMENTS INC,SCI INSTRUMENTS DIV,OYAMA,SHIZUOKA 41013,JAPAN
来源
关键词
D O I
10.1117/12.245221
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:324 / 335
页数:12
相关论文
共 50 条
  • [41] Focused ion beam induced deposition of platinum for repair processes
    Tao, Tao
    Wilkinson, William
    Melngailis, John
    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 1991, 9 (01): : 162 - 164
  • [42] Reliability of a focused ion beam repair on digital CMOS circuits
    VanCamp, R
    VanDoorselaer, K
    Clemminck, I
    MICROELECTRONICS AND RELIABILITY, 1996, 36 (11-12): : 1787 - 1790
  • [43] FOCUSED ION-BEAM REPAIR - STAINING OF PHOTOMASKS AND RETICLES
    PREWETT, PD
    SUNDARAM, GM
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (07) : 1135 - 1137
  • [44] FOCUSED-ION-BEAM FUSE CUTTING FOR REDUNDANCY TECHNOLOGY
    KOMANO, H
    OHMURA, Y
    TAKIGAWA, T
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 899 - 903
  • [45] Research of graphics generation and Auto-Alignment system for Focused-ion-beam
    Tsinghua Univ, Beijing, China
    Tien Tzu Hsueh Pao/Acta Electronica Sinica, 1998, 26 (05): : 69 - 71
  • [46] LATERAL STRAGGLE OF FOCUSED-ION-BEAM IMPLANTED BE IN GAAS
    VIGNAUD, D
    ETCHIN, S
    LIAO, KS
    MUSIL, CR
    ANTONIADIS, DA
    MELNGAILIS, J
    APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2267 - 2269
  • [47] LOW-ABERRATION EINZEL LENS FOR A FOCUSED-ION-BEAM SYSTEM.
    Kurihara, Kenji
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1985, 24 (02): : 225 - 230
  • [48] REGISTRATION ACCURACY IN FOCUSED-ION-BEAM LITHOGRAPHY FOR THE FABRICATION OF A GAAS-FET WITH A MUSHROOM GATE
    YASUOKA, A
    HOSONO, K
    MORIMOTO, H
    SASAKI, Y
    WATAKABE, Y
    KATO, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (10) : 3030 - 3033
  • [49] REGISTRATION ACCURACY IN FOCUSED-ION-BEAM LITHOGRAPHY FOR THE FABRICATION OF GAAS-FET WITH A MUSHROOM GATE
    KATO, T
    HOSONO, K
    MORIMOTO, H
    SASAKI, Y
    WATAKABE, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C375 - C375
  • [50] Recent Development of Focused Ion Beam System and Application
    Chen, Yan
    An, Libao
    Yang, Xiaoxia
    MATERIALS PROCESSING AND MANUFACTURING III, PTS 1-4, 2013, 753-755 : 2578 - 2581