Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress at high temperature

This paper studies the degradation of device parameters and that of stress induced leakage current (SILC) of thin tunnel gate oxide under channel hot electron (CHE) stress at high temperature by using n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with 1.4-nm gate oxides. The degradation of device parameters under CHE stress exhibits saturating time dependence at high temperature. The emphasis of this paper is on SILC of an ultra-thin-gate-oxide under CHE stress at high temperature. Based on the experimental results, it is found that there is a linear correlation between SILC degradation and V-h degradation in NMOSFETs during CHE stress. A model of the combined effect of oxide trapped negative charges and interface traps is developed to explain the origin of SILC during CHE stress.