Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

被引：0
|
作者：
An, Yu-Peng [1 ]
Wang, Yi-Ding [1 ]
Cao, Feng [1 ]
机构：
[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China
来源：
OPTICA APPLICATA | 2010年 / 40卷 / 01期
关键词：
point defects; interdiffusion; built-in electric field; LASERS; POLARIZATION; FABRICATION; DIFFUSION;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si(3)N(4) and SiO(2) as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.
引用
收藏
页码：249 / 254
页数：6
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