Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

被引：0

作者：

An, Yu-Peng ^{[1
]}

Wang, Yi-Ding ^{[1
]}

Cao, Feng ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

OPTICA APPLICATA | 2010年 / 40卷 / 01期

关键词：

point defects; interdiffusion; built-in electric field; LASERS; POLARIZATION; FABRICATION; DIFFUSION;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si(3)N(4) and SiO(2) as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.

引用

页码：249 / 254

页数：6

共 50 条

[31] Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers
J.S. Yu
J.D. Song
J.M. Kim
Y.T. Lee
H. Lim
Applied Physics A, 2004, 78 : 113 - 117
[32] Effect of the property of dielectric capping layers on impurity-free vacancy diffusion in InGaAs/InGaAsP MQW structures
Yu, Jae Su
Chung, Kwan Soo
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (08) : 919 - 924
[33] Effect of stress on impurity-free quantum well intermixing
Deenapanray, PNK
Jagadish, C
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (02) : G11 - G13
[34] Influence of dielectric deposition parameters on the In0.2Ga0.8As/GaAs quantum well intermixing by impurity-free vacancy disordering
Yu, JS
Song, JD
Lee, YT
Lim, H
JOURNAL OF APPLIED PHYSICS, 2002, 92 (03) : 1386 - 1390
[35] Intermixing characteristics of strained-InGaAs/InGaAsP multiple quantum well structure using impurity-free vacancy diffusion
Park, JW
Kim, HS
Kim, JS
Oh, DK
Oh, KR
Yeo, DH
Kim, SJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (11B): : L1303 - L1305
[36] Evolution of InGaAs/InP quantum well intermixing as a function of cap layer
Carmody, C
Tan, HH
Jagadish, C
COMMAD 2002 PROCEEDINGS, 2002, : 491 - 494
[37] Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering
Yu, JS
Song, JD
Lee, YT
Lim, H
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 42 : S458 - S461
[38] Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion
Ooi, BS
McIlvaney, K
Street, MW
Helmy, AS
Ayling, SG
Bryce, AC
Marsh, JH
Roberts, JS
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (10) : 1784 - 1793
[39] Selective quantum-well intermixing in GaAs-AlGaAs structures using impurity-free vacancy diffusion
Nanyang Technological Univ, Singapore
IEEE J Quantum Electron, 10 (1784-1793):
[40] A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells
Dao, LV
Gal, M
Carmody, C
Tan, HH
Jagadish, C
JOURNAL OF APPLIED PHYSICS, 2000, 88 (09) : 5252 - 5254

← 1 2 3 4 5 →