Doped cap layer effect on impurity-free vacancy enhanced disordering in InGaAs/InP quantum well structures

被引：0

作者：

An, Yu-Peng ^{[1
]}

Wang, Yi-Ding ^{[1
]}

Cao, Feng ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Changchun 130012, Peoples R China

来源：

OPTICA APPLICATA | 2010年 / 40卷 / 01期

关键词：

point defects; interdiffusion; built-in electric field; LASERS; POLARIZATION; FABRICATION; DIFFUSION;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Strong influence on impurity-free vacancy enhanced disordering by the cap layer doping is studied on the InGaAs/InP quantum well structure with a doped cap layer. The observations are consistent with intermixing experiments using both Si(3)N(4) and SiO(2) as encapsulation dielectric layers. The largest intermixing occurs in the n-InP capped samples and is explained by the enhancement in out-diffusion of positive ions by the built-in electric field.

引用

页码：249 / 254

页数：6

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