Impurity Free Vacancy Disordering (IFVD) of InGaAs/AlGaAs Quantum Well Laser Structures

被引：1
|
作者：
Gareso, P. L. [1 ]
Tan, H. H. [2 ]
Jagadish, C. [2 ]
机构：
[1] Hasanuddin Univ, Fac Math & Nat Sci, Dept Phys, Makassar 90245, Indonesia
[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2017年 / 6卷 / 08期
关键词：
MOLECULAR-BEAM EPITAXY; VAPOR-PHASE EPITAXY; CARBON-DOPED GAAS; LATTICE CONTRACTION; GROWTH; LAYER; INTERDIFFUSION; TETRACHLORIDE; SUPPRESSION; DEPOSITION;
D O I：
10.1149/2.0251708jss
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Impurity free vacancy disordering (IFVD) has been used to investigate the atomic interdiffusion of InGaAs/InGaAs quantum well laser structures using double-crystal X-ray diffraction (DCXRD) and photoluminescence measurements. X-ray measurements showed that some part of the carbon was electrically activated after annealing without a dielectric capping layer, but not after annealing with a TiO2 capping layer. For a SiO2 capping layer, the tensile peak was still observed after annealing which is comparable to the samples annealed without capping layer. Photoluminescence results showed that a large energy shift was observed when the samples were coated with SiO2. A negligible photoluminescence shift was observed after annealing when the samples coated with TiO2. (C) 2017 The Electrochemical Society. All rights reserved.
引用
收藏
页码：N122 / N126
页数：5
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