Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

被引：1

作者：

Pei, Guangqing

Xia, Changtai ^{[1
]}

Wu, Feng

Zhang, Jungang

Wu, Yongqing

Xu, Jun

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 11-12期

基金：

上海市自然科学基金;

关键词：

liquid phase epitaxy; ZnO films;

D O I：

10.1016/j.matlet.2006.08.074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2299 / 2302

页数：4

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