Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

被引：1
|
作者：
Pei, Guangqing
Xia, Changtai [1 ]
Wu, Feng
Zhang, Jungang
Wu, Yongqing
Xu, Jun
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 11-12期
基金：
上海市自然科学基金;
关键词：
liquid phase epitaxy; ZnO films;
D O I：
10.1016/j.matlet.2006.08.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2299 / 2302
页数：4
相关论文
共 50 条
  • [21] HIGH-RESISTIVITY INP LAYER GROWN BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    OHTSUKA, K
    OHISHI, T
    ABE, Y
    SUGIMOTO, H
    MATSUI, T
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) : 467 - 470
  • [22] GROWTH OF FILMS OF SEMICONDUCTING ALLOYS BY LIQUID-PHASE EPITAXY WITH A TEMPERATURE-GRADIENT (LPETG)
    GOLUBEV, LV
    KHACHATURYAN, OA
    SHIK, AY
    SHMARTSEV, YV
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1974, 22 (02): : K203 - K204
  • [23] Low-temperature liquid-phase epitaxy of YBa2Cu3Oy films by the molten KOH method
    Funaki, Shuhei
    Yamada, Yasuji
    Okunishi, Ryota
    Miyachi, Yugo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
  • [24] Low-defect-density ZnO homoepitaxial films grown by low-temperature ALD
    Elam, David
    Ortega, Eduardo
    Nemashkalo, Anastasiia
    Strzhemechny, Yuri
    Ayon, Arturo
    Ponce, Arturo
    Chabanov, Andrey A.
    APPLIED PHYSICS LETTERS, 2021, 119 (14)
  • [25] STRAINED SI1-XGEX LAYERS GROWN BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    CHAN, BO
    HEALY, SA
    GREEN, MA
    MATERIALS LETTERS, 1992, 14 (5-6) : 263 - 267
  • [26] INFLUENCE OF GROWTH-CONDITIONS ON PROPERTIES OF INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    STOJANOFF, V
    SHAHID, MA
    MCDEVITT, TL
    MAHAJAN, S
    SCHLESINGER, TE
    BONNER, WA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 3 (03): : 279 - 285
  • [27] Low-temperature oxidation of SiGe by liquid-phase deposition
    Chen, Y. H.
    Kung, C. Y.
    Hwang, J. D.
    Lin, H. Y.
    Chan, H. J.
    Chen, P. S.
    APPLIED SURFACE SCIENCE, 2008, 254 (19) : 6034 - 6036
  • [28] EVALUATION OF LOW-TEMPERATURE METHANOL SYNTHESIS IN THE LIQUID-PHASE
    OHYAMA, S
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1994, 208 : 94 - FUEL
  • [29] KINETICS OF LOW-TEMPERATURE LIQUID-PHASE CHLORINATION OF METHANE
    SERGEEV, GB
    PUKHOVSKII, AV
    SMIRNOV, VV
    DOKLADY AKADEMII NAUK SSSR, 1981, 258 (03): : 685 - 688
  • [30] PHOTOLUMINESCENCE OF QUANTUM-WELL LAYERS IN ALGAAS HETEROSTRUCTURES FORMED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    ANDREEV, VM
    VODNEV, AA
    MINTAIROV, AM
    RUMYANTSEV, VD
    KHVOSTIKOV, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (07): : 736 - 738
12345