Homoepitaxial growth of ZnO films via low-temperature liquid-phase epitaxy

被引：1
|
作者：
Pei, Guangqing
Xia, Changtai [1 ]
Wu, Feng
Zhang, Jungang
Wu, Yongqing
Xu, Jun
机构：
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
来源：
MATERIALS LETTERS | 2007年 / 61卷 / 11-12期
基金：
上海市自然科学基金;
关键词：
liquid phase epitaxy; ZnO films;
D O I：
10.1016/j.matlet.2006.08.074
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2299 / 2302
页数：4
相关论文
共 50 条
  • [31] ALGAAS-HETEROSTRUCTURES WITH QUANTUM-DIMENSIONAL LAYERS, OBTAINED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    ALFEROV, ZI
    ANDREEV, VM
    VODNEV, AA
    KONNIKOV, SG
    LARIONOV, VR
    POGREBITSKII, KY
    RUMYANTSEV, VD
    KHVOSTIKOV, VP
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 12 (18): : 1089 - 1093
  • [32] Low-Temperature Growth of ZnO Films by Spray Pyrolysis
    Yoshino, Kenji
    Takemoto, Yujin
    Oshima, Minoru
    Toyota, Kouji
    Inaba, Koichiro
    Haga, Ken-ichi
    Tokudome, Koichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (04)
  • [33] DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 193 - 198
  • [34] Low-Temperature Liquid-Phase Sintering of Zirconia: Phase Composition and Microstructure
    Smirnov, V. V.
    Smirnov, S., V
    Obolkina, T. O.
    Antonova, O. S.
    Goldberg, M. A.
    Barinov, S. M.
    DOKLADY CHEMISTRY, 2020, 494 (02) : 159 - 162
  • [35] Low-Temperature Liquid-Phase Sintering of Zirconia: Phase Composition and Microstructure
    V. V. Smirnov
    S. V. Smirnov
    T. O. Obolkina
    O. S. Antonova
    M. A. Goldberg
    S. M. Barinov
    Doklady Chemistry, 2020, 494 : 159 - 162
  • [36] LOW-THRESHOLD QUANTUM-WELL ALGAAS HETEROJUNCTION LASERS FABRICATED BY LOW-TEMPERATURE LIQUID-PHASE EPITAXY
    ALFEROV, ZI
    ANDREEV, VM
    AKSENOV, VY
    LARIONOV, VR
    RUMYANTSEV, VD
    KHVOSTIKOV, VP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1123 - 1125
  • [37] LIQUID-METAL-MEDIATED HOMOEPITAXIAL FILM GROWTH OF GE AT LOW-TEMPERATURE
    XIONG, FL
    GANZ, E
    LOESER, AG
    GOLOVCHENKO, JA
    SPAEPEN, F
    APPLIED PHYSICS LETTERS, 1991, 59 (27) : 3586 - 3588
  • [38] DISLOCATION REPLICATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1990, 7 (1-2): : 83 - 101
  • [39] DISLOCATION PROPAGATION AND ANNIHILATION IN INP HOMOEPITAXIAL LAYERS GROWN BY LIQUID-PHASE EPITAXY
    BEAM, EA
    MAHAJAN, S
    BONNER, WA
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (100): : 193 - 198
  • [40] KINETICS AND MECHANISM OF THE LOW-TEMPERATURE LIQUID-PHASE OXIDATION OF HEXAFLUOROPROPYLENE
    SHAPOVALOV, VV
    POLUEKTOV, VA
    DOKLADY AKADEMII NAUK SSSR, 1989, 307 (04): : 920 - 923
12345