A novel area efficient edge termination technique for planar, MOS controlled power devices

被引：0
|
作者：
Bose, JVSC [1 ]
De Souza, MM [1 ]
Sweet, M [1 ]
Spulber, O [1 ]
Narayanan, EMS [1 ]
机构：
[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we demonstrate a novel area efficient edge termination structure utilising lightly doped p well rings. The addition of a metal field plate makes the structure immune to variations in the substrate concentration and the fixed oxide charge. We also propose that instead of a metal field plate for each p well rings, it is adequate to have a metal field plate for every alternate p well ring. This method reduces the total area occupied by the edge termination structure.
引用
收藏
页码：349 / 352
页数：4
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