A novel area efficient edge termination technique for planar, MOS controlled power devices

被引：0

作者：

Bose, JVSC ^{[1
]}

De Souza, MM ^{[1
]}

Sweet, M ^{[1
]}

Spulber, O ^{[1
]}

Narayanan, EMS ^{[1
]}

机构：

[1] De Montfort Univ, Emerging Technol Res Ctr, Leicester LE1 9BH, Leics, England

来源：

PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we demonstrate a novel area efficient edge termination structure utilising lightly doped p well rings. The addition of a metal field plate makes the structure immune to variations in the substrate concentration and the fixed oxide charge. We also propose that instead of a metal field plate for each p well rings, it is adequate to have a metal field plate for every alternate p well ring. This method reduces the total area occupied by the edge termination structure.

引用

页码：349 / 352

页数：4

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