Large area MOS-gated power devices using fusible link technology

被引:0
|
作者
Motorola Inc, Phoenix, United States [1 ]
机构
来源
IEEE Trans Electron Devices | / 2卷 / 347-351期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Large area MOS-gated power devices using fusible link technology
    Venkatraman, P
    Baliga, BJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (02) : 347 - 351
  • [2] Large area MOS-gated power devices using high-current fusible links
    Venkatraman, P
    Baliga, BJ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (01) : 172 - 174
  • [3] LATERAL MOS-GATED POWER DEVICES - A UNIFIED VIEW
    DARWISH, MN
    SHIBIB, MA
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (07) : 1600 - 1604
  • [4] YIELD LOSS MECHANISMS IN MOS-GATED POWER DEVICES
    VENKATRAMAN, P
    BALIGA, BJ
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1995, 8 (04) : 451 - 453
  • [5] Investigation of Negative Gate Capacitance in MOS-Gated Power Devices
    Long, Hong Yao
    Sweet, Mark R.
    Narayanan, Ekkanath Madathil Sankara
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) : 3464 - 3469
  • [6] CRMGT: A MOS-gated power switch
    Sridhar, S
    Baliga, BJ
    ELECTRONICS LETTERS, 1996, 32 (18) : 1722 - 1723
  • [7] Active Thermal Control for Reliability Improvement of MOS-gated Power Devices
    Soldati, Alessandro
    Concari, Carlo
    Dossena, Fabrizio
    Barater, Davide
    Iannuzzo, Francesco
    Blaabjerg, Frede
    IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2017, : 7935 - 7940
  • [8] IMPROVEMENT OF ON-RESISTANCE OF MOS-GATED DEVICES
    BAUDELOT, E
    CHANTE, JP
    URGELL, JJ
    ELECTRONICS LETTERS, 1982, 18 (13) : 546 - 547
  • [9] Electron irradiation efects on static (100) and (111) power MOS-gated devices
    Badila, M
    Millan, J
    Brezeanu, C
    Godignon, P
    Jordà, X
    Iliescu, E
    Banu, V
    2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 2000, : 251 - 254
  • [10] THE SINFET - A SCHOTTKY INJECTION MOS-GATED POWER TRANSISTOR
    SIN, JKO
    SALAMA, CAT
    HOU, LZ
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (12) : 1940 - 1947