950V, 8.7mohm-cm2 high speed 4H-SiC power DMOSFETs

被引：0
|
作者：
Ryu, Sei-Hyung [1 ]
Jonas, Charlotte [2 ]
Heath, Bradley [2 ]
Richmond, James [2 ]
Agarwal, Anant [2 ]
Palmour, John [2 ]
机构：
[1] Cree Inc, Sic Power Devices, 4600 Silicon Dr, Durham, NC 27706 USA
[2] Cree Inc, Durham, NC 27706 USA
来源：
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characteristics of high voltage, high speed DMOSFETs in 4H-SiC are presented. The devices were built on 1.2x10(16) cm(-3) doped, 6 mu m thick n-type epilayer grown on a n(+) 4H-SiC substrate. A specific on-resistance of 8.7 m Omega cm(2) and a blocking voltage of 950 V were measured. Device characteristics were measured for temperatures up to 300 degrees C. An increase of specific on-resistance by 35% observed at 300 degrees C, when compared to the value at room temperature. This is due to a negative shift in MOS threshold voltage, which decreases the MOS channel resistance at elevated temperatures. This effect cancels out the increase in drift layer resistance due to a decrease in bulk electron mobility at elevated temperature, resulting in a temperature stable on-resistance. The device operation at temperatures up to 300 degrees C and high speed switching results are also reported in this paper.
引用
收藏
页码：391 / +
页数：3
相关论文
共 50 条
  • [41] 4H-SiC high power SIJFET module
    Sugawara, Y
    Takayama, D
    Asano, K
    Ryu, S
    Miyauchi, A
    Hayashi, SO
    ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS, 2003, : 127 - 130
  • [42] High-speed Homoepitaxial Growth of 4H-SiC
    Zhu Ming-Xing
    Shi Biao
    Chen Yi
    Liu Xue-Chao
    Shi Er-Wei
    JOURNAL OF INORGANIC MATERIALS, 2012, 27 (08) : 785 - 789
  • [43] 27 mΩ-cm2, 1.6 kV power DiMOSFETs in 4H-SiC
    Ryu, SH
    Agarwal, A
    Richmond, J
    Palmour, J
    Saks, N
    Williams, J
    PROCEEDINGS OF THE 14TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2002, : 65 - 68
  • [44] 1330 V, 67 mΩ • cm2 4H-SiC(0001) RESURF MOSFET
    Kimoto, T
    Kawano, H
    Suda, J
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 649 - 651
  • [45] Stability and 2-D simulation studies of avalanche breakdown in 4H-SiC DMOSFETs with JTE
    Okayama, Taizo
    Arthur, Stephen D.
    Rao, R. Ramakrishna
    Kishore, Kuna
    Rao, Mupuri V.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (02) : 489 - 494
  • [46] High-performance power BJTs in 4H-SiC
    Huang, CF
    Cooper, JA
    IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS, 2002, : 50 - 57
  • [47] A novel high power bipolar transistor in 4H-SiC
    Zhao, JH
    Li, X
    Fursin, L
    Alexandrov, P
    Pan, M
    Weiner, M
    Burke, T
    Khalil, G
    2001 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, PROCEEDINGS, 2001, : 231 - 234
  • [48] High-power 4H-SiC JBS rectifiers
    Singh, R
    Capell, DC
    Hefner, AR
    Lai, J
    Palmour, JW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (11) : 2054 - 2063
  • [49] 900 V DMOS and 1100 V UMOS 4H-SiC power FETs
    Casady, JB
    Agarwal, AK
    Rowland, LB
    Valek, WF
    Brandt, CD
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 32 - 33
  • [50] High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
    Cheng, L.
    Sankin, I.
    Bondarenko, V.
    Mazzola, M. S.
    Scofield, J. D.
    Sheridan, D. C.
    Martin, P.
    Casady, J. R. B.
    Casady, J. B.
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1055 - +
12345